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TH50VSF2580AASB

Part Number	TH50VSF2580AASB
Manufacturer	Toshiba Semiconductor
Description	SRAM AND FLASH MEMORY MIXED MULTI-CHIP
Published	Oct 29, 2008
Detailed Description	TH50VSF2580/2581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULT...
Datasheet	TH50VSF2580AASB PDF File

Overview

TH50VSF2580/2581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF2580/2581AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory.
The CIOS and CIOF inputs can be used to select the optimal memory configuration.
The power supply for the TH50VSF2580/2581AASB can range from 2.
7 V to 3.
6 V.
The TH50VSF2580/2581AASB can perform simultaneous read/write operations on its flash memory and is available in a 69-pin BGA package, making it suitable for a variety of applications.
FEATURES Power supply voltage VCCs = 2.
7 V~3.
6 V V = 2.
7 V~3.
6 V www.
DataSheet...

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TH50VSF2580AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP - Toshiba Semiconductor

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