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TH50VSF3582AASB

Part Number	TH50VSF3582AASB
Manufacturer	Toshiba Semiconductor
Description	MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
Published	Oct 29, 2008
Detailed Description	TH50VSF3582/3583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULT...
Datasheet	TH50VSF3582AASB PDF File

Overview

TH50VSF3582/3583AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory.
The CIOS and CIOF inputs can be used to select the optimal memory configuration.
The power supply.
FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.
The TH50VSF3582/3583AASB can range from 2.
67 V to 3.
3 V.
The TH50VSF3582/3583AASB is available in a 69-pin BGA package, making it suitable for a variety of design applications.
FEATURES Power supply voltage VCCs ...

Similar Datasheet

TH50VSF3582AASB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS - Toshiba Semiconductor

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