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TTS3816B4E

Part Number	TTS3816B4E
Manufacturer	TwinMOS
Description	2M x 16Bit x 4 Banks synchronous DRAM
Published	Nov 4, 2008
Detailed Description	M.tec 2M x 16Bit x 4 Banks synchronous DRAM TTS3816B4E GENERAL DESCRIPTION The TTS3816B4E is 134,217,728 bits synchron...
Datasheet	TTS3816B4E PDF File

Overview

M.
tec 2M x 16Bit x 4 Banks synchronous DRAM TTS3816B4E GENERAL DESCRIPTION The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system www.
DataSheet4U.
com applications.
FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four-banks...

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TTS3816B4E 2M x 16Bit x 4 Banks synchronous DRAM - TwinMOS

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