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MX29L1611G

Part Number	MX29L1611G
Manufacturer	Macronix International
Description	CMOS SINGLE VOLTAGE FLASH EEPROM
Published	Nov 17, 2008
Detailed Description	ADVANCED INFORMATION MX29L1611G / MX29L1611* 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES 3.3V ± ...
Datasheet	MX29L1611G PDF File

Overview

ADVANCED INFORMATION MX29L1611G / MX29L1611* 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES 3.
3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns Fast page access time: 30ns (Only for 29L1611PC-90/ www.
DataSheet4U.
com 10/12) • Sector erase architecture - 32 equal sectors of 64k bytes each - Sector erase time: 200ms typical • Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip - Automatically programs and verifies data at specified addresses • • • • • • Status Register feature for detection of program or erase cycle completion • Low VCC ...

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