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T835-400B

STMicroelectronics
Part Number T835-400B
Manufacturer STMicroelectronics
Description (T835-xxxB) HIGH PERFORMANCE TRIACS
Published Nov 17, 2008
Detailed Description T810-xxxB ® T835-xxxB FEATURES ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10mA and 35mA www.DataSheet4UH.coIGmH COMMUTATION TEC...
Datasheet PDF File T835-400B PDF File

T835-400B
T835-400B

Overview
T810-xxxB ® T835-xxxB FEATURES ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10mA and 35mA www.
DataSheet4UH.
coIGmH COMMUTATION TECHNOLOGY HIGH ITSM CAPABILITY HIGH PERFORMANCE TRIACS A2 DESCRIPTION The T810-xxxB and T835-xxxB series are using high performance TOPGLASS PNPN technology.
These devices are intented for AC control applications, using surface mount technology where high commutating and surge performances are required (like power tools, Solid State Relay).
A2 G A1 DPAK (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj T Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2t value for fusing Critical rate of rise of on-state current IG = 50mA diG/dt = 0.
1A/µs Tc =110 °C tp = 8.
3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10 s Value 8 85 80 32 20 100 - 40 to + 150 - 40 to + 125 260 Unit A A A2s A/µs °C °C °C Symbol Parameter VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C T810-/T835- 400B 400 600B 600 Unit V May 1998 Ed : 1A 1/5 T810-xxxB / T835-xxxB THERMAL RESISTANCES Symbol Rth (j-c) Rth (j-c) Rth (j-a) Parameter Junction to case for DC Junction to case for AC 360° conduction angle ( F= 50 Hz) Junction to ambient (S = 0.
5 cm2) Value 2.
1 1.
6 70 Unit °C/W °C/W °C/W GATE CHARACTERISTICS (maximum values) www.
DataSheet4U.
com PG(AV) = 1 W PGM= 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant IGT VGT VGD IL IH * VTM * IDRM IRRM VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.
3kΩ IG=1.
2 IGT IT= 100mA gate open ITM= 11A tp= 380µs VDRM Rated VRRM Rated Tj=25°C Tj=25°C Tj=125°C Tj=25°C Tj=25°C Tj=25°C Tj=25°C Tj=125°C I-II-III I-II-III I-II-III I-II-III dV/dt * Linear slope up to VD=67%VDRM gate open Tj=125°C (dI/dt)c * (dV/dt)c = 0.
1V/µs Tj=125°C (dV/dt)c = 15V/µs ...


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