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H7P0601DL

Renesas Technology
Part Number H7P0601DL
Manufacturer Renesas Technology
Description Silicon P Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003 www.Data...
Datasheet PDF File H7P0601DL PDF File

H7P0601DL
H7P0601DL

Overview
H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.
1.
00 Aug.
05.
2003 www.
DataSheet4U.
com Features • Low on-resistance RDS(on) = 40 mΩ typ.
• Low drive current • 4.
5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 1 2 S 1 2 3 3 H7P0601DS H7P0601DL 1.
Gate 2.
Drain 3.
Source 4.
Drain Rev.
1.
00, Aug.
05.
2003, page 1 of 10 H7P0601DL, H7P0601DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.
DataSheet4U.
com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note3 Note2 Note1 Rating –60 ±20 –20 –80 –20 –12 12.
3 25 150 –55 to +150 Unit V V A A A A...


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