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H7N1002AB

Part Number	H7N1002AB
Manufacturer	Renesas Technology
Description	Silicon N Channel MOS FET High Speed Power Switching
Published	Nov 20, 2008
Detailed Description	H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003 www.DataSheet4U.com...
Datasheet	H7N1002AB PDF File

Overview

H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.
2.
00 Oct.
30.
2003 www.
DataSheet4U.
com Features • Low on-resistance RDS(on) = 8 mΩ typ.
• Low drive current • Available for 4.
5 V gate drive Outline TO-220AB D G S 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source Rev.
2.
00, Oct.
30.
2003, page 1 of 9 H7N1002AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.
DataSheet4U.
com Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 Ratings 100 ±20 75 300 75 50 166 100 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel...

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