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AP40T03GS

Advanced Power Electronics
Part Number AP40T03GS
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Nov 20, 2008
Detailed Description AP40T03GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fas...
Datasheet PDF File AP40T03GS PDF File

AP40T03GS
AP40T03GS


Overview
AP40T03GS/P Pb Free Plating Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast www.
DataSheet4U.
com Switching ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 25mΩ 28A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP40T03J) are (AP40T03GP) are available available for for low-profile low-profile applications.
applications.
G D G D S TO-263(S) TO-220(P) S Units V V A A A W W/℃ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ±25 28 24 95 31.
25 0.
25 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 4.
0 62 Units ℃/W ℃/W Data and specifications subject to change without notice 200331053-1/4 AP40T03GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
30 1 - Typ.
0.
032 Max.
Units 25 45 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) www.
DataSheet4U.
com Static Drain-Source On-Resistance VGS=10V, ID=18A VGS=4.
5V, ID=14A 15 8.
8 2.
5 5.
8 6 62 16 4.
4 655 145 95 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold ...



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