DatasheetsPDF.com

H5N2001LD

Renesas Technology
Part Number H5N2001LD
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 20...
Datasheet PDF File H5N2001LD PDF File

H5N2001LD
H5N2001LD

Overview
H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.
6.
00 Jul 14, 2006 Features • Low on-resistance • Low leakage current www.
DataSheet4U.
com • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1.
Gate 2.
Drain 3.
Source 4.
Drain 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 H5N2001LD H5N2001LS D RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G 1 2 3 S H5N2001LM Rev.
6.
00 Jul 14, 2006 page 1 of 7 H5N2001LD, H5N2001LS, H5N2001LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance www.
DataSheet4U.
com Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)