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H5N2004DS

Renesas Technology
Part Number H5N2004DS
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2...
Datasheet PDF File H5N2004DS PDF File

H5N2004DS
H5N2004DS

Overview
H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.
2.
00 Sep 07, 2005 Features www.
DataSheet4U.
com • Low • Low on-resistance: R DS (on) = 0.
38 Ω typ.
leakage current: IDSS = 1 µA max (at VDS = 200 V) • High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A) • Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A) • Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 D 4 1.
Gate 2.
Drain 3.
Source 4.
Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) G 1 2 3 S 1 2 3 Rev.
2.
00 Sep 07, 2005 page 1 of 7 H5N2004DL, H5N2004DS Abs...


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