H7N0608FM
Silicon N Channel MOS FET Power Switching
REJ03G0165-0100Z Rev.1.00 Dec.04.2003
www.DataSheet4U.com
Features
Low on-resistance RDS(on) = 6.5 mΩ typ. Low drive current 4.5 V gate drive device can be driven from 5 V source
Outline
TO-220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
Rev.1.00, Dec.04.2003, page 1 of 9
H7N0608FM
Absolute Maxi...
