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HAT1110R

Renesas Technology
Part Number HAT1110R
Manufacturer Renesas Technology
Description Silicon P-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT1110R Silicon P Channel Power MOS FET Power Switching Features • Capable of –4.5 V gate drive • Low drive current • ...
Datasheet PDF File HAT1110R PDF File

HAT1110R
HAT1110R

Overview
HAT1110R Silicon P Channel Power MOS FET Power Switching Features • Capable of –4.
5 V gate drive • Low drive current • High density mounting Outline SOP-8 78 56 DD DD 2 4 G G S1 MOS1 S3 MOS2 8 7 65 1 234 REJ03G0416-0200 Rev.
2.
00 Oct.
07.
2004 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS –80 Gate to source voltage VGSS ±20 Drain current Drain peak current ID –1 ID(pulse)Note1 –6 Reverse drain current Channel dissipation Channel dissipation IDR –1 Pch Note2 1.
2 Pch Note3 1.
8 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
...


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