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IRF7220

International Rectifier
Part Number IRF7220
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Nov 23, 2008
Detailed Description PD- 91850C IRF7220 l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel S S S G De...
Datasheet PDF File IRF7220 PDF File

IRF7220
IRF7220

Overview
PD- 91850C IRF7220 l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel S S S G Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infrared, or wave soldering techniques.
HEXFET® Power MOSFET A 1 8D 2 7D VDSS = -14V 3 6D 4 5 D RDS(on) = 0.
012Ω T op V ie w SO-8 Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA www.
irf.
com Parameter Maximum Junction-to-Ambientƒ Max.
-14 ±11 ±8.
8 ±88 2.
5 1.
6 0.
02 110 ± 12 -55 to + 150 Max.
50 Units V A W W/°C mJ V °C Units °C/W 1 7/16/99 IRF7220 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -14 ––– ––– V VGS = 0V, ID = -5mA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient ––– -0.
006 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– .
0082 0.
012 ––– .
0125 0.
020 Ω VGS = -4.
5V, ID = -11A ‚ VGS = -2.
5V, ID = -8.
8A ‚ VGS(th) Gate Threshold Voltage -0.
60 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance 8.
4 ...


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