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MRF6V10250HSR3

Part Number	MRF6V10250HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistor
Published	Nov 30, 2008
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 0, 2/2008 RF Power Field Effect Transistor ...
Datasheet	MRF6V10250HSR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev.
0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle.
This device is suitable for use in pulsed applications.
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 250 mA, Pout = 250 Watts Peak, f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 10% Power Gain — 21 dB Drain Efficiency — 60% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1090 MHz, 250 Watts Peak Power Features www.
DataSheet4U.
com • Characterized with Series Equivalent Large - Signal Impedance Parameters ...

Similar Datasheet

MRF6V10250HSR3 RF Power Field Effect Transistor - Freescale Semiconductor

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