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MRF6VP41KHSR6

Part Number	MRF6VP41KHSR6
Manufacturer	Freescale Semiconductor
Description	RF Power FET
Published	Nov 30, 2008
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs De...
Datasheet	MRF6VP41KHSR6 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to 500 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
• Typical Pulse Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.
), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 20 dB Drain Efficiency — 64% • Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 Watts Peak Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • CW Operation Capability with Adequate Cooling • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Designed for Push--Pull Operation • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • In Tape and Reel.
R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p.
17.
Document Num...

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MRF6VP41KHSR6 RF Power FET - Freescale Semiconductor

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