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APM4416

Anpec Electronics Coropration
Part Number APM4416
Manufacturer Anpec Electronics Coropration
Description N-Channel MOSFET
Published Dec 8, 2008
Detailed Description APM4416 N-Channel Enhancement Mode MOSFET Features • • www.DataSheet4U.com Pin Description SO-8 30V/8A , RDS(ON)=15mΩ...
Datasheet PDF File APM4416 PDF File

APM4416
APM4416

Overview
APM4416 N-Channel Enhancement Mode MOSFET Features • • www.
DataSheet4U.
com Pin Description SO-8 30V/8A , RDS(ON)=15mΩ(typ.
) @ VGS=10V RDS(ON)=22mΩ(typ.
) @ VGS=4.
5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package Top View S S S G 1 2 3 4 8 7 6 5 D D D D • • Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G D Ordering and Marking Information APM 4416 H a n d lin g C o d e Tem p.
R ange P ackage C ode S N-Channel MOSFET P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p .
R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel A P M 4416 K : A P M 4416 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 30 ±20 8 32 A V Unit Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev.
A.
1 - Jan.
, 2002 1 www.
anpec.
com.
tw * Surface Mounted on FR4 Board, t ≤ 10 sec.
APM4416 Absolute Maximum Ratings Cont.
Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG www.
DataSheet4U.
com (TA = 25°C unless otherwise noted) Rating 2.
5 1.
0 150 -55 to 150 50 W °C °C °C/W Unit Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient RθjA Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25°C unless otherwise noted) APM4416 Min.
Typ.
Max.
Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V , IDS=250µA VDS=24V , VGS=0V VDS=24V...


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