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K3N5VU1000F-DC

Part Number	K3N5VU1000F-DC
Manufacturer	Samsung Semiconductor
Description	16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
Published	Dec 9, 2008
Detailed Description	K3N5V(U)1000F-D(G)C 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES • Switchable organization 2,097,152 x 8(byte mode) 1,04...
Datasheet	K3N5VU1000F-DC PDF File

Overview

K3N5V(U)1000F-D(G)C 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.
3V Operation : 100ns(Max.
)@CL=50pF, 120ns(Max.
)@CL=100pF 3.
0V Operation : 120ns(Max.
)@CL=100pF • Supply voltage : single +3.
0V/single +3.
3V www.
DataSheet4U.
com • Current consumption Operating : 40mA(Max.
) Standby : 30µA(Max.
) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -.
K3N5V(U)1000F-DC : 42-DIP-600 -.
K3N5V(U)1000F-GC : 44-SOP-600 CMOS MASK ROM GENERAL DESCRIPTION The K3N5V(U)1000F-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process techn...

Similar Datasheet

K3N5VU1000F-DC 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM - Samsung Semiconductor
K3N5VU1000F-DGC 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM - Samsung Semiconductor

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