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SI1072X

Vishay Siliconix
Part Number SI1072X
Manufacturer Vishay Siliconix
Description N-Channel 30 V (D-S) MOSFET
Published Dec 12, 2008
Detailed Description N-Channel 30 V (D-S) MOSFET Si1072X Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.093 at VGS = 10 V 0.12...
Datasheet PDF File SI1072X PDF File

SI1072X
SI1072X

Overview
N-Channel 30 V (D-S) MOSFET Si1072X Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.
093 at VGS = 10 V 0.
129 at VGS = 4.
5 V ID (A) 1.
3a 1.
2 Qg (Typ.
) 5.
41 SC-89 (6-LEADS) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices D1 D2 G3 6D 5D 4S Marking Code YY V XX Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1072X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Avalanche Current Repetitive Avalanche Energy L = 0.
1 mH IAS EAS Continuous Source-Drain Diode Current TA = 25 °C IS Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 30 ± 20 1.
3b, c 1.
03b, c 6 8 3.
2 0.
2b, c 0.
236b, c 0.
151b, c - 55 to 150 Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t 5 s Steady State Notes: a.
Based on TC = 25 °C.
b.
Surface mounted on 1" x 1" FR4 board.
c.
t = 5 s.
d.
Maximum under steady state conditions is 650 °C/W.
Symbol RthJA Typical 440 540 Maximum 530 650 Unit °C/W Document Number: 73892 S10-2542-Rev.
E, 08-Nov-10 www.
vishay.
com 1 Si1072X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS...


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