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SiHFU024

Vishay Siliconix
Part Number SiHFU024
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 13, 2008
Detailed Description www.vishay.com IRFR024, IRFU024, SiHFR024, SiHFU024 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (...
Datasheet PDF File SiHFU024 PDF File

SiHFU024
SiHFU024

Overview
www.
vishay.
com IRFR024, IRFU024, SiHFR024, SiHFU024 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.
8 11 Single 0.
10 D DPAK (TO-252) D IPAK (TO-251) D G S G GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Surface Mount (IRFR024, SiHFR024) • Straight Lead (IRFU024, SiHFU024) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface mount applications.
ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and Halogen-free SiHFR024-GE3 Lead (Pb)-free IRFR024PbF SiHFR024-E3 Note a.
See device orientation.
DPAK (TO-252) SiHFR024TR-GE3 IRFR024TRPbFa SiHFR024T-E3a DPAK (TO-252) SiHFR024TRL-GE3 - IPAK (TO-251) SiHFU024-GE3 IRFU024PbF SiHFU024-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc TC = 25 °C TA = 25 °C EAS PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
...


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