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SiHFU110

Vishay Siliconix
Part Number SiHFU110
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 13, 2008
Detailed Description www.vishay.com IRFR110, SiHFR110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qg...
Datasheet PDF File SiHFU110 PDF File

SiHFU110
SiHFU110

Overview
www.
vishay.
com IRFR110, SiHFR110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 8.
3 2.
3 3.
8 Single 0.
54 D DPAK (TO-252) D G GS S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR110, SiHFR110) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
Power dissipation levels up to 1.
5 W are possible in typical surface mount applications.
ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) SiHFR110-GE3 IRFR110PbF SiHFR110-E3 Note a.
See device orientation.
DPAK (TO-252) SiHFR110TRL-GE3 IRFR110TRLPbFa SiHFR110TL-E3a DPAK (TO-252) SiHFR110TR-GE3 IRFR110TRPbFa SiHFR110T-E3a DPAK (TO-252) SiHFR110TRR-GE3 IRFR110TRRPbFa SiHFR110TR-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 25 V, starting TJ = 25 °C, L = 8.
1 mH, Rg = 25 ,...


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