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IRFR1N60A

Vishay Siliconix
Part Number IRFR1N60A
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 13, 2008
Detailed Description IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) R...
Datasheet PDF File IRFR1N60A PDF File

IRFR1N60A
IRFR1N60A


Overview
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.
vishay.
com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.
) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 14 2.
7 8.
1 Single 7.
0 D DPAK (TO-252) D IPAK (TO-251) D G S G GD S S N-Channel MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • Power Factor Correction TYPICAL SMPS TOPOLOGIES • Low Power Single Transistor Flyback ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and Halogen-free SiHFR1N60A-GE3 Lead (Pb)-free IRFR1N60APbF SiHFR1N60A-E3 DPAK (TO-252) SiHFR1N60ATRL-GE3a IRFR1N60ATRLPbFa SiHFR1N60ATL-E3a DPAK (TO-252) SiHFR1N60ATR-GE3a IRFR1N60ATRPbFa SiHFR1N60AT-E3a DPAK (TO-252) SiHFR1N60ATRR-GE3a IRFR1N60ATRRPbFa SiHFR1N60ATR-E3a IPAK (TO-251) SiHFU1N60A-GE3 IRFU1N60APbF SiHFU1N60A-E3 Note a.
See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg LIMIT 600 ± 30 1.
4 0.
89 5.
6 0.
28 93 1.
4 3.
6 36 3.
8 - 55 to + 150 300 UNIT V A W/°C mJ A mJ W V/ns °C Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
Starting TJ = 25 °C, L = 95 mH, Rg = 25 , IAS = 1.
4 A (see fig.
12).
c.
ISD  1.
4 ...


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