DatasheetsPDF.com

SiHFR210

Vishay Siliconix
Part Number SiHFR210
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 13, 2008
Detailed Description www.vishay.com IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (...
Datasheet PDF File SiHFR210 PDF File

SiHFR210
SiHFR210

Overview
www.
vishay.
com IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 8.
2 1.
8 4.
5 Single 1.
5 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface mount applications.
ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) SiHFR210-GE3 IRFR210PbF SiHFR210-E3 Note a.
See device orientation.
DPAK (TO-252) SiHFR210TRL-GE3a IRFR210TRLPbFa SiHFR210TL-E3a DPAK (TO-252) IRFR210TRPbFa SiHFR210T-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a.
Repetitive rating; pulse width limited by maximum junction tem...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)