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SiHFU320

Vishay Siliconix
Part Number SiHFU320
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 13, 2008
Detailed Description www.vishay.com IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D...
Datasheet PDF File SiHFU320 PDF File

SiHFU320
SiHFU320

Overview
www.
vishay.
com IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 1.
8 20 3.
3 11 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR320,SiHFR320) • Straight lead (IRFU320,SiHFU320) • Available in tape and reel • Fast switching Available • Ease of paralleling • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface-mount applications.
ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHFR320-GE3 IRFR320PbF-BE3 Lead (Pb)-free IRFR320PbF Note a.
See device orientation DPAK (TO-252) SiHFR320TRL-GE3a IRFR320TRLPbF-BE3 IRFR320TRLPbFa DPAK (TO-252) SiHFR320TR-GE3 a IRFR320TRPbF-BE3 IRFR320TRPbF a DPAK (TO-252) - IPAK (TO-251) SiHFU320-GE3 IRFR320TRRPbF a IRFU320PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor Linear derating factor (PCB mount) e Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dV/dt c Operating junction and storage temperature range Soldering recommendations (peak temperature) d VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C TA =...


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