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SiHFR420

Vishay Siliconix
Part Number SiHFR420
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 13, 2008
Detailed Description www.vishay.com IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D...
Datasheet PDF File SiHFR420 PDF File

SiHFR420
SiHFR420

Overview
www.
vishay.
com IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max.
(nC) Qgs (nC) 500 VGS = 10 V 3.
0 19 3.
3 Qgd (nC) Configuration 13 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR420, SiHFR420) • Straight lead (IRFU420, SiHFU420) • Available in tape and reel • Fast switching Available • Ease of paralleling • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface-mount applications.
ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHFR420-GE3 IRFR420PbF-BE3 Lead (Pb)-free IRFR420PbF Note a.
See device orientation DPAK (TO-252) SiHFR420TR-GE3 a IRFR420TRPbF-BE3 IRFR420TRPbF a DPAK (TO-252) SiHFR420TRL-GE3 a IRFR420TRLPbF-BE3 IRFR420TRLPbF a DPAK (TO-252) SiHFR420TRR-GE3 a IRFR420TRRPbF a IPAK (TO-251) SiHFU420-GE3 IRFU420PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor Linear derating factor (PCB mount) e Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dV/dt c VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage...


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