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SiHFU9110

Vishay Siliconix
Part Number SiHFU9110
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 13, 2008
Detailed Description IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(o...
Datasheet PDF File SiHFU9110 PDF File

SiHFU9110
SiHFU9110

Overview
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 www.
vishay.
com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 8.
7 2.
2 4.
1 Single 1.
2 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9110, SiHFR9110) • Straight Lead (IRFU9110, SiHFU9110) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU, SiHFU Series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface mount applications.
ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) SiHFR9110-GE3 IRFR9110PbF SiHFR9110-E3 Note a.
See device orientation.
DPAK (TO-252) SiHFR9110TRL-GE3 IRFR9110TRLPbFa SiHFR9110TL-E3a DPAK (TO-252) SiHFR9110TR-GE3 IRFR9110TRPbFa SiHFR9110T-E3a IPAK (TO-251) SiHFU9110-GE3 IRFU9110PbF SiHFU9110-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current Pulsed Drain Currenta VGS at - 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature...


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