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SiHFR9214

Vishay Siliconix
Part Number SiHFR9214
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 13, 2008
Detailed Description IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251)...
Datasheet PDF File SiHFR9214 PDF File

SiHFR9214
SiHFR9214

Overview
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 www.
vishay.
com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D S G GS GD S D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration -250 VGS = -10 V 3.
0 14 3.
1 6.
8 Single FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9214, SiHFR9214) • Straight lead (IRFU9214, SiHFU9214) • P-channel • Fast switching Available • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface-mount applications.
ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHFR9214-GE3 Lead (Pb)-free IRFR9214PbF Note a.
See device orientation DPAK (TO-252) SiHFR9214TRL-GE3 IRFR9214TRLPbF a DPAK (TO-252) SiHFR9214TR-GE3 IRFR9214TRPbF a IPAK (TO-251) SiHFU9214-GE3 IRFU9214PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at -10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range S...


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