DatasheetsPDF.com

SiHFU9220

Vishay Siliconix
Part Number SiHFU9220
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 13, 2008
Detailed Description IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(o...
Datasheet PDF File SiHFU9220 PDF File

SiHFU9220
SiHFU9220

Overview
IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.
vishay.
com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 20 3.
3 11 Single 1.
5 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9220, SiHFR9220) • Straight Lead (IRFUFU9220, SiHFU9220) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors.
The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface mount applications.
ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) Lead (Pb)-free and Halogen-free Lead (Pb)-free SiHFR9220-GE3 IRFR9220PbF SiHFR9220-E3 SiHFR9220TRL-GE3a IRFR9220TRLPbFa SiHFR9220TL-E3a SiHFR9220TRR-GE3a IRFR9220TRRPbFa SiHFR9220TR-E3a SiHFR9220TR-GE3a IRFR9220TRPbFa SiHFR9220T-E3a Note a.
See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc VGS at - 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM TC = 25 °C TA = 25 °C ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)