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SiHFUC20

Vishay Siliconix
Part Number SiHFUC20
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 13, 2008
Detailed Description www.vishay.com IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D...
Datasheet PDF File SiHFUC20 PDF File

SiHFUC20
SiHFUC20

Overview
www.
vishay.
com IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 4.
4 18 3.
0 8.
9 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFRC20, SiHFRC20) • Straight lead (IRFUC20, SiHFUC20) • Available in tape and reel • Fast switching Available • Ease of paralleling • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFUC, SiHFUC series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 W are possible in typical surface mount applications.
ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHFRC20-GE3 IRFRC20PbF-BE3 Lead (Pb)-free IRFRC20PbF Note a.
See device orientation DPAK (TO-252) SiHFRC20TRL-GE3 IRFRC20TRLPbF-BE3 IRFRC20TRLPbF a DPAK (TO-252) SiHFRC20TR-GE3 IRFRC20TRPbF-BE3 IRFRC20TRPbF a DPAK (TO-252) SiHFRC20TRR-GE3 IRFRC20TRRPbF-BE3 IRFRC20TRRPbF a IPAK (TO-251) SiHFUC20-GE3 IRFUC20PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear derating factor (PCB mount) e Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dV/dt c TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating j...


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