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SIHFZ34S

Vishay Siliconix
Part Number SIHFZ34S
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Jan 10, 2009
Detailed Description IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Q...
Datasheet PDF File SIHFZ34S PDF File

SIHFZ34S
SIHFZ34S

Overview
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration www.
DataSheet4U.
com VGS = 10 V 46 11 22 Single 60 0.
050 FEATURES • • • • • • Advanced Process Technology Surface Mount Low-Profile Through-Hole (IRFZ34L/SiHFZ34L) 175 °C Operating Temperature Fast Switching Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION D I2PAK (TO-262) D2PAK (TO-263) G D S G S N-Channel MOSFET Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAKis a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application.
The through-hole version (IRFZ34L/SiHFZ34L) is available for low-profile applications.
ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a.
See device orientation.
D2PAK (TO-263) IRFZ34SPbF SiHFZ34S-E3 IRFZ34S SiHFZ34S D2PAK (TO-263) IRFZ34STRRPbFa SiHFZ34STRPbFa IRFZ34STRRa SiHFZ34STRa D2PAK (TO-263) IRFZ34STRLPbFa SiHFZ34STLPbFa IRFZ34STRLa SiHFZ34STLa I2PAK (TO-263) IRFZ34LPbF SiHFZ34L-E3 IRFZ34L SiHFZ34L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb, e Maximum Power Dissipation dV/dtc, e TC = 25 °C TA = 25 °C Currenta, e VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS PD L...


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