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SIHFZ48

Vishay Siliconix
Part Number SIHFZ48
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Jan 10, 2009
Detailed Description IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Conf...
Datasheet PDF File SIHFZ48 PDF File

SIHFZ48
SIHFZ48

Overview
IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration www.
DataSheet4U.
com VGS = 10 V 110 29 36 Single D FEATURES 60 0.
018 • • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated Ultra Low On-Resistance Very Low Thermal Resistance 175 °C Operating Temperature Fast Switching Ease of Paralleling Lead (Pb)-free Available Available RoHS* COMPLIANT TO-220 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFZ48PbF SiHFZ48-E3 IRFZ48 SiHFZ48 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 60 ± 20 50 50 290 1.
3 100 50 19 190 4.
5 - 55 to + 175 300 10 1.
1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m TC = 25 °C for 10 s 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 25 V, starting TJ = 25 °C, L = 22 µH, RG = 25 Ω IAS = 72 A (see fig.
12).
c.
ISD ≤ 72 A, dV/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d.
1.
6 mm from case e.
Current limited by the package, (die current = 72 A).
* Pb c...


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