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TC55V16256FTI-12

Part Number	TC55V16256FTI-12
Manufacturer	Toshiba Semiconductor
Description	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Published	Jan 18, 2009
Detailed Description	TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM...
Datasheet	TC55V16256FTI-12 PDF File

Overview

TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.
3 V power supply.
Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access.
Data byte control signals ( LB , UB ) provide lower and upper byte access.
This device is well suited to cache memory applications where high-speed access and high-speed storage are required.
All inputs and outputs are directly LVTTL compatible.
The TC55V16256JI/FTI is available in plastic 44-pin SOJ and 44-pin TSOP with 400mil width for high density surface assembly.
The TC55V16256JI/FTI guarantees −40° to 85°C operating temperature so it is suitable for use in wide operating ...

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