DatasheetsPDF.com

IRFY240

Seme LAB
Part Number IRFY240
Manufacturer Seme LAB
Description N-CHANNEL POWER MOSFET
Published Jan 20, 2009
Detailed Description www.DataSheet4U.com IRFY240 MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.67 ...
Datasheet PDF File IRFY240 PDF File

IRFY240
IRFY240

Overview
www.
DataSheet4U.
com IRFY240 MECHANICAL DATA Dimensions in mm (inches) 4.
70 5.
00 0.
70 0.
90 3.
56 Dia.
3.
81 10.
41 10.
67 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 0.
89 1.
14 16.
38 16.
89 13.
39 13.
64 1 2 3 12.
70 19.
05 200V 12A 0.
19Ω 10.
41 10.
92 2.
54 BSC 2.
65 2.
75 • HERMETICALLY SEALED TO–220 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS TO–220M – Metal Package Pad 1 – Gate Pad 2 – Drain Pad 3 – Source • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RθJC RθJA Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V 12A 7.
8A 48A 60W 0.
48W/°C –55 to 150°C 2.
1°C/W max.
80°C/W max.
Semelab plc.
Telephone (01455) 556565.
Telex: 341927.
Fax (01455) 552612.
Prelim.
9/95 www.
DataSheet4U.
com IRFY240 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS ∆TJ RDS(on) STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage Breakdown Voltage Static Drain – Source On–State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS ≥ 15V VGS = 0 VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.
5BVDSS ID = 12A VDS = 0.
5BVDSS VDD = 100V ID = 12A RG = 9.
1Ω ID = 12A ID = 7.
8A ID = 12A ID = 250µA IDS = 7.
8A VDS = 0.
8BVDSS TJ = 125°C ID = 1mA Min.
200 Typ.
Max.
Unit V ∆BVDSS Temperature Coef...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)