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MRF19120S

Part Number	MRF19120S
Manufacturer	Motorola
Description	RF POWER FIELD EFFECT TRANSISTORS
Published	Feb 13, 2009
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19120/D The RF Sub–Micron MOSFET Line www.DataSheet4U...
Datasheet	MRF19120S PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19120/D The RF Sub–Micron MOSFET Line www.
DataSheet4U.
com RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs MRF19120 MRF19120S 1990 MHz, 120 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
• CDMA Performance @ 1990 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — –47 dBc @ 30 kHz BW 1.
25 MHz — –55 dBc @ 12.
5 kHz BW 2.
25 MHz — –55 dBc @ 1 MHz BW Outpu...

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