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2SC3110

Part Number	2SC3110
Manufacturer	Inchange
Description	Silicon Power Transistor
Published	Feb 17, 2009
Detailed Description	INCHANGE Semiconductor www.DataSheet4U.com isc RF Product Specification isc Silicon NPN RF Transistor 2SC3110 DESCRI...
Datasheet	2SC3110 PDF File

Overview

INCHANGE Semiconductor www.
DataSheet4U.
com isc RF Product Specification isc Silicon NPN RF Transistor 2SC3110 DESCRIPTION ·Low Noise ·High Gain ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in RF wide band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.
5 V IC Collector Current-Continuous 30 mA ICP Collector Current-Peak 50 mA PC Collector Power Dissipation @TC=25℃ 0.
2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.
iscsemi.
cn INCHANGE Semiconductor www.
DataShee...

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