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TYP1012

STMicroelectronics
Part Number TYP1012
Manufacturer STMicroelectronics
Description SCR
Published Mar 3, 2009
Detailed Description www.DataSheet4U.com ® TYP512 TYP1012 SCR FOR OVERVOLTAGE PROTECTION A FEATURES High surge current capability High dI...
Datasheet PDF File TYP1012 PDF File

TYP1012
TYP1012

Overview
www.
DataSheet4U.
com ® TYP512 TYP1012 SCR FOR OVERVOLTAGE PROTECTION A FEATURES High surge current capability High dI/dt rating High stability and reliability s s s G K DESCRIPTION The TYN512 and TYN1012 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology.
This general purpose Family of Silicon Controlled Rectifiers is designed for overvoltage protection in crowbar circuits application.
K A G TO-220AB ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM I2t ITM dI/dt Tstg Tj Tl Parameter RMS on-state current (180° conduction angle, single phase circuit) Average on-state current (180° conduction angle, single phase circuit) Non repetitive surge peak on-state current (Tj initial = 25°C) I2t value Non repetitive surge peak on-state current (Tj initial = 25°C) Exponential pulse wave form Critical rate of rise of on-state current Gate supply: IG = 100mA dIG/dt = 1A/µs Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.
5mm from case Tc = 110°C Tc = 110°C tp = 8.
3ms tp = 10ms tp = 10ms tp = 1ms Value 12 8 315 300 450 750 100 -40 to +150 -40 to +125 260 A2s A A/µs °C °C Unit A A A TYP Symbol VDRM VRRM Parameter 512 Repetitive peak off-state voltage Tj = 125°C 50 1012 100 V Unit September 2001 - Ed: 1A 1/5 TYP512 TYP1012 www.
DataSheet4U.
com THERMAL RESISTANCE Symbol Rth (j-a) Rth (j-c) DC Junction to ambient Junction to case for DC Parameter Value 60 1.
3 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 10W (tp = 20µs) IFGM = 4A (tp = 20µs) VRGM = 5V ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL IH VTM IDRM IRRM dV/dt tq VD = 12V (DC) VD = 12V (DC) VD = VDRM RL = 33Ω RL = 33Ω RL = 3.
3kΩ Test conditions Tj = 25°C Tj = 25°C Tj =125°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 125°C Linear slope up to VD = 67% VDRM gate open VD=67%VDRM ITM= 50A VR= 25V dITM/dt=30 A/µs dVD/dt= 50V/µs Tj = 125°C Tj = 125°C MAX.
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