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W16NB60

STMicroelectronics
Part Number W16NB60
Manufacturer STMicroelectronics
Description STW16NB60
Published Mar 6, 2009
Detailed Description www.DataSheet4U.com STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh™ MOSFET TYPE STW16NB60 s s s s s VDSS 600V ...
Datasheet PDF File W16NB60 PDF File

W16NB60
W16NB60

Overview
www.
DataSheet4U.
com STW16NB60 N-CHANNEL 600V - 0.
3Ω - 16A TO-247 PowerMesh™ MOSFET TYPE STW16NB60 s s s s s VDSS 600V RDS(on) < 0.
35 Ω ID 16 A TYPICAL RDS(on) = 0.
3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature Value 600 600 ±30 16 10 64 220 1.
76 4 –65 to 150 150 (1)ISD ≤16A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T j ≤ T JMAX.
Unit V V V A A A W W/°C V/ns °C °C (•)Pulse width limited by safe operating area April 2003 1/8 STW16NB60 www.
DataSheet4U.
com THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.
567 30 300 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 16 600 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OT...


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