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FKPF5N80

Fairchild Semiconductor
Part Number FKPF5N80
Manufacturer Fairchild Semiconductor
Description Bi-Directional Triode Thyristor Planar Silicon
Published Mar 30, 2009
Detailed Description FKPF5N80 www.DataSheet4U.com FKPF5N80 Application Explanation • • • • Switching mode power supply, light dimmer, elect...
Datasheet PDF File FKPF5N80 PDF File

FKPF5N80
FKPF5N80


Overview
FKPF5N80 www.
DataSheet4U.
com FKPF5N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit TV sets, stereo, refrigerator, washing machine, bread maker Electric blanket, solenoid driver, small motor control Photo copier, electric tool 2 1: T1 2: T2 3: Gate 3 1 2 3 TO-220F 1 Bi-Directional Triode Thyristor Planar Silicon Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VDRM Parameter Repetitive Peak Off-State Voltage (Note1 ) Rating 800 Units V Symbol IT (RMS) ITSM I2t di/dt PGM PG (AV) VGM IGM TJ TSTG Viso Parameter RMS On-State Current Surge On-State Current I2t for Fusing Critical Rate of Rise of On-State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Isolation Voltage Conditions Commercial frequency, sine full wave 360° conduction, TC=104°C Sinewave 1 full cycle, peak value, non-repetitive 50Hz 60Hz Rating 5 50 55 12.
5 50 5 0.
5 10 2 - 40 ~ 125 - 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristic Symbol Rth(J-C) Parameter Thermal Resistance Test Condition Junction to case (Note 4) Min.
Typ.
Max.
3.
9 Units °C/W ©2004 Fairchild Semiconductor Corporation Rev.
A, April 2004 FKPF5N80 Electrical www.
DataSheet4U.
com Symbol IDRM VTM Characteristics TC=25°C unless otherwise noted Test Condition VDRM applied TC=25°C, ITM=7.
5A Instantaneous measurement I II III I II III VD=12V, RL=20Ω TJ=125°C, VD=1/2VDRM VD = 12V, ITM = 1A I, III II VD = 12V, IG = 1.
2IGT VDRM = Rated, Tj = 125°C, Exponential Rise VD=12V, RL=20Ω T2(+), Gate (+) T2(+), Gate (-) T2(-), Gate (-) T2(+), Gate (+) T2(+), Gate (-) T2(-), Gate (-) Min.
0.
2 10 Typ.
300 Max.
20 1.
5 1.
5 1.
5 1.
5 20 20 20 30 30 50 Units µA V V V V mA mA mA V mA mA mA V/µs V/µs Parameter Repetieive ...



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