DatasheetsPDF.com

IRHM8130

International Rectifier
Part Number IRHM8130
Manufacturer International Rectifier
Description RADIATION HARDENED POWER MOSFET THRU-HOLE
Published Apr 20, 2009
Detailed Description www.datasheet4u.com PD - 90707D RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number Radia...
Datasheet PDF File IRHM8130 PDF File

IRHM8130
IRHM8130


Overview
www.
datasheet4u.
com PD - 90707D RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number Radiation Level IRHM7130 100K Rads (Si) IRHM3130 300K Rads (Si) IRHM4130 600K Rads (Si) IRHM8130 1000K Rads (Si) R DS(on) 0.
18 Ω 0.
18 Ω 0.
18 Ω 0.
18 Ω ID 14A 14A 14A 14A IRHM7130 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® TO-254AA International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features: ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 14 9.
0 56 75 0.
60 ±20 160 14 7.
5 5.
5 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 ( 0.
063 in.
(1.
6mm) from case for 10s) 9.
3(Typical ) g www.
irf.
com 1 7/5/01 IRHM7130 www.
datasheet4u.
com Pre-Irradiation @ Tj = 25°C (Unless Otherwise Specified) Min 100 — — — 2.
0 3.
3 — — — — — — ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)