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NT512D64S8HB1GY

ETC
Part Number NT512D64S8HB1GY
Manufacturer ETC
Description 184 pin Unbuffered DDR DIMM
Published Apr 24, 2009
Detailed Description NT512D64S8HB1G / NT512D64S8HB1GY / NT512D64S8HB0G NT256D64S88B1G / NT256D64S88B1GY NT256D64S88B0G NT128D64SH4B1G / NT512...
Datasheet PDF File NT512D64S8HB1GY PDF File

NT512D64S8HB1GY
NT512D64S8HB1GY

Overview
NT512D64S8HB1G / NT512D64S8HB1GY / NT512D64S8HB0G NT256D64S88B1G / NT256D64S88B1GY NT256D64S88B0G NT128D64SH4B1G / NT512D72S8PB0G (ECC) / NT256D72S89B0G (ECC) 512MB, 256MB and 128MB PC3200, PC2700 and PC2100 Unbuffered DDR DIMM 184 pin Unbuffered DDR DIMM www.
datasheet4u.
com Based on DDR400/333/266 256M bit B Die device Features • 184 Dual In-Line Memory Module (DIMM) • Unbuffered DDR DIMM based on 256M bit die B device, organized as either 32Mbx8 or 16Mbx16 • Performance: PC3200 PC2700 PC2100 Speed Sort DIMM CAS Latency fCK tCK Clock Frequency Clock Cycle 5T 3 200 5 400 6K 2.
5 166 6 333 75B 2.
5 133 7.
5 266 MHz ns MHz Unit • DRAM DLL aligns DQ and DQS transitions with clock transitions • Address and control signals are fully synchronous to positive clock edge • Programmable Operation: - DIMM CAS Latency: 2, 2.
5, 3 - Burst Type: Sequential or Interleave - Burst Length: 2, 4, 8 - Operation: Burst Read and Write • Auto Refresh (CBR) and Self Refresh Modes • Automatic and controlled prech...


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