Advanced Power MOSFET
Description
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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ.)
Ο
SSS70N10A
BVDSS = 100 V RDS(on) = 0.023 Ω ID = 28 A
TO-220F
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