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MS1000

Advanced Power Technology
Part Number MS1000
Manufacturer Advanced Power Technology
Description RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Published May 7, 2009
Detailed Description 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1000 RF & MICROWAVE TRANS...
Datasheet PDF File MS1000 PDF File

MS1000
MS1000

Overview
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1000 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS www.
datasheet4u.
com Features • • • • • • • 30 MHz 28 VOLTS IMD = -30 dB GOLD METALLIZATION POUT = 125 WATTS GP = 15dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications.
Diffused emitter ballast provide infinite VSWR capability under rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 36 4.
0 20 270 200 -65 to +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.
65 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein V...


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