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MS1079

Advanced Power Technology
Part Number MS1079
Manufacturer Advanced Power Technology
Description RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Published May 7, 2009
Detailed Description MS1079 www.datasheet4u.com RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • 30 MHz 50 VOLTS POUT = 22...
Datasheet PDF File MS1079 PDF File

MS1079
MS1079


Overview
MS1079 www.
datasheet4u.
com RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • 30 MHz 50 VOLTS POUT = 220 W GP = 13 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications.
This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Value 110 55 4.
0 12 320 +200 -65 to +150 Unit V V V A W °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Juncti...



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