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DB-55008L-450

ST Microelectronics
Part Number DB-55008L-450
Manufacturer ST Microelectronics
Description RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Published Jun 9, 2009
Detailed Description DB-55008L-450 www.datasheet4u.com RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Pr...
Datasheet PDF File DB-55008L-450 PDF File

DB-55008L-450
DB-55008L-450

Overview
DB-55008L-450 www.
datasheet4u.
com RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features ■ ■ ■ ■ ■ ■ ■ Excellent thermal stability Frequency: 318 - 450 MHz Supply voltage: 13.
6 V Output power: 8 W Power gain: 14.
6 ± 0.
6 dB Efficiency: 52 % - 73 % BeO free amplifier Description The DB-55008L-450 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile applications.
Table 1.
Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-450 March 2009 Rev 1 1/14 www.
st.
com 14 This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
Contents DB-55008L-450 Contents 1 www.
datasheet4u.
com Electrical data .
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3 1.
1 Maximum ratings .
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3 2 3 4 Electrical characteristics .
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3 Impedance .
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4 Typical performance .
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5 4.
1 VDD = 13.
6 V, IDQ = 200 mA, PIN = 25 dBm .
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5 5 6 7 8 9 Test circuit .
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6 Circuit layout .
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8 Mounting indications .
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9 Package mechanical data .
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10 Revision history .
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12 2/...


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