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DB-55015-490

Part Number	DB-55015-490
Manufacturer	ST Microelectronics
Description	RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs
Published	Jun 9, 2009
Detailed Description	DB-55015-490 www.datasheet4u.com RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs Prel...
Datasheet	DB-55015-490 PDF File

Overview

DB-55015-490 www.
datasheet4u.
com RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features ■ ■ ■ ■ ■ ■ ■ ■ Excellent thermal stability Frequency: 420 - 490 MHz Supply voltage: 13.
2 V Output power: 15 W Power gain: 13.
5 ± 0.
7 dB Efficiency: 51 % - 62 % Load mismatch: 20:1 Beo free amplifier Description The DB-55015-490 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile radio applications.
Table 1.
Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55015-490 March 2009 Rev 1 1/14 www.
st.
com 14 This is preliminary information on a new product now in dev...

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DB-55015-490 RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs - ST Microelectronics

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