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LA6H0912-500

NXP
Part Number LA6H0912-500
Manufacturer NXP
Description LDMOS Avionics Radar Power Transistor
Published Jun 10, 2009
Detailed Description BLA6H0912-500 LDMOS avionics radar power transistor Rev. 01 — 5 March 2009 www.datasheet4u.com Objective data sheet 1....
Datasheet PDF File LA6H0912-500 PDF File

LA6H0912-500
LA6H0912-500

Overview
BLA6H0912-500 LDMOS avionics radar power transistor Rev.
01 — 5 March 2009 www.
datasheet4u.
com Objective data sheet 1.
Product profile 1.
1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.
Table 1.
Test information Typical RF performance at Tcase = 25 °C; tp = 128 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation pulsed RF f (MHz) 960 to 1200 VDS (V) 50 PL (W) 500 Gp (dB) 17 ηD (%) 50 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1...


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