RF POWER FIELD EFFECT TRANSISTORS
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM 900 MHz frequency band, the high gain and broadband performance www.datasheet4u.com of these devices make them ideal for large–signal, common– source amplifier a...
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