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BLF6G20-110

NXP Semiconductors
Part Number BLF6G20-110
Manufacturer NXP Semiconductors
Description Power LDMOS transistor
Published Jul 1, 2009
Detailed Description www.DataSheet4U.com BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 01 — 28 January 2008 Preliminary data sheet ...
Datasheet PDF File BLF6G20-110 PDF File

BLF6G20-110
BLF6G20-110

Overview
www.
DataSheet4U.
com BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev.
01 — 28 January 2008 Preliminary data sheet 1.
Product profile 1.
1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 19 ηD (%) 31 IMD3 (dBc) −37[1] ACPR (dBc) −40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStatic D...


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