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MRF7S15100HR3

Part Number	MRF7S15100HR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jul 16, 2009
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 0, 7/2008 RF Power Field...
Datasheet	MRF7S15100HR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev.
0, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1470 to 1510 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 23 Watts Avg.
, f = 1507.
5 MHz, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 19.
5 dB Drain Ef...

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