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BLF6G22-180RN

NXP
Part Number BLF6G22-180RN
Manufacturer NXP
Description Power LDMOS Transistor
Published Jul 29, 2009
Detailed Description www.DataSheet4U.com BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 Product data sheet...
Datasheet PDF File BLF6G22-180RN PDF File

BLF6G22-180RN
BLF6G22-180RN

Overview
www.
DataSheet4U.
com BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev.
01 — 20 November 2008 Product data sheet 1.
Product profile 1.
1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 16.
0 ηD (%) 25 IMD3 (dBc) −38[1] ACPR (dBc) −42[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.
0 dB N Efficiency = 25 % N IMD3 = −3...


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