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EIC1112-5

Excelics Semiconductor
Part Number EIC1112-5
Manufacturer Excelics Semiconductor
Description Internally Matched Power FET
Published Aug 4, 2009
Detailed Description www.DataSheet4U.com EIC1112-5 ISSUED 07/03/2007 11.7-12.7 GHz 5-Watt Internally Matched Power FET 0.060 MIN 0.650±0.00...
Datasheet PDF File EIC1112-5 PDF File

EIC1112-5
EIC1112-5

Overview
www.
DataSheet4U.
com EIC1112-5 ISSUED 07/03/2007 11.
7-12.
7 GHz 5-Watt Internally Matched Power FET 0.
060 MIN 0.
650±0.
008 0.
512 GATE FEATURES • • • • • • 11.
7– 12.
7GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.
5 dBm Output Power at 1dB Compression 6.
5 dB Power Gain at 1dB Compression 25% Power Added Efficiency Hermetic Metal Flange Package Excelics EIC1112-5 0.
060 MIN 0.
022 0.
319 DRAIN YYWW 2X 0.
094 0.
382 0.
004 0.
130 0.
045 0.
071±0.
008 Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 11.
7-12.
7GHz VDS = 10 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 11.
7-12.
7GHz VDS = 10 V, IDSQ ≈ 1600mA Gain Flatness f = 11.
7-12.
7GHz VDS = 10 V, IDSQ ≈ 1600mA Power Added Efficiency at 1dB Compression f = 11.
7-12.
7GHz VDS = 10 V, IDSQ ≈ 1600mA Drain Current at 1dB Compression f = 11.
7-12.
7GHz -40 Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Ton...


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